MMIX2F60N50P3 - Multi channel transistors

MMIX2F60N50P3
Description

Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET x2
Technology HiPerFET™
Polar3™
Polarisation unipolar
Drain-source voltage 500V
Drain current 30A
Pulsed drain current 150A
Power dissipation 320W
Case SMPD
Gate-source voltage ±30V
On-state resistance 0.12Ω
Mounting SMD
Gate charge 96nC
Kind of channel enhancement
Reverse recovery time 250ns
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Development and design: Seventh Cat