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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / MMIX1T600N04T2

MMIX1T600N04T2 - SMD N channel transistors

MMIX1T600N04T2
Description

Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology GigaMOS™
TrenchT2™
Polarisation unipolar
Drain-source voltage 40V
Drain current 600A
Pulsed drain current 2kA
Power dissipation 830W
Case SMPD
Gate-source voltage ±20V
On-state resistance 1.3mΩ
Mounting SMD
Gate charge 590nC
Kind of channel enhancement
Reverse recovery time 100ns
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Development and design: Seventh Cat