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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / MMIX1F40N110P

MMIX1F40N110P - SMD N channel transistors

MMIX1F40N110P
Description

Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology HiPerFET™
Polar™
Polarisation unipolar
Drain-source voltage 1.1kV
Drain current 24A
Pulsed drain current 100A
Power dissipation 500W
Case SMPD
Gate-source voltage ±30V
On-state resistance 0.29Ω
Mounting SMD
Gate charge 310nC
Kind of channel enhancement
Reverse recovery time 300ns
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Development and design: Seventh Cat