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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / MMIX1F210N30P3

MMIX1F210N30P3 - SMD N channel transistors

MMIX1F210N30P3
Description

Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology HiPerFET™
Polar3™
Polarisation unipolar
Drain-source voltage 300V
Drain current 108A
Pulsed drain current 550A
Power dissipation 520W
Case SMPD
Gate-source voltage ±20V
On-state resistance 16mΩ
Mounting SMD
Gate charge 268nC
Kind of channel enhancement
Reverse recovery time 250ns
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Development and design: Seventh Cat