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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / MMIX1F160N30T

MMIX1F160N30T - SMD N channel transistors

MMIX1F160N30T
Description

Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology GigaMOS™
HiPerFET™
Trench™
Polarisation unipolar
Drain-source voltage 300V
Drain current 102A
Pulsed drain current 440A
Power dissipation 570W
Case SMPD
Gate-source voltage ±20V
On-state resistance 20mΩ
Mounting SMD
Gate charge 367nC
Kind of channel enhancement
Reverse recovery time 200ns
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Development and design: Seventh Cat