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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / MMIX1F132N50P3

MMIX1F132N50P3 - SMD N channel transistors

MMIX1F132N50P3
Description

Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology HiPerFET™
Polar3™
Polarisation unipolar
Drain-source voltage 500V
Drain current 63A
Pulsed drain current 330A
Power dissipation 520W
Case SMPD
Gate-source voltage ±30V
On-state resistance 43mΩ
Mounting SMD
Gate charge 267nC
Kind of channel enhancement
Reverse recovery time 250ns
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Development and design: Seventh Cat