MMBZ33VALT1G - Protection diodes - arrays

MMBZ33VALT1G
Description

Diode: TVS array; 33V; 0.87A; 40W; double,common anode; SOT23; Ch: 2

Specifications
Manufacturer ONSEMI
Type of diode TVS array
Breakdown voltage 33V
Max. forward impulse current 0.87A
Peak pulse power dissipation 40W
Semiconductor structure common anode
double
Mounting SMD
Case SOT23
Max. off-state voltage 26V
Leakage current 50nA
Number of channels 2
Kind of package reel
tape
Tolerance ±5%
Version ESD
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Development and design: Seventh Cat