MMBZ12VALT1G - Protection diodes - arrays

MMBZ12VALT1G
Description

Diode: TVS array; 12V; 2.35A; 40W; double,common anode; SOT23; Ch: 2

Specifications
Manufacturer ONSEMI
Type of diode TVS array
Breakdown voltage 12V
Max. forward impulse current 2.35A
Peak pulse power dissipation 40W
Semiconductor structure common anode
double
Mounting SMD
Case SOT23
Max. off-state voltage 8.5V
Leakage current 0.2µA
Number of channels 2
Kind of package reel
tape
Tolerance ±5%
Version ESD
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Development and design: Seventh Cat