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Home / Catalog / TME catalog / Semiconductors / Transistors / Bipolar transistors / Single bipolar transistors / NPN SMD transistors / MMBT5551LT1G

MMBT5551LT1G - NPN SMD transistors

MMBT5551LT1G
Description

Transistor: NPN; bipolar; 160V; 0.6A; 0.225/0.3W; SOT23,TO236AB

Specifications
Manufacturer ONSEMI
Type of transistor NPN
Polarisation bipolar
Collector-emitter voltage 160V
Collector current 0.6A
Power dissipation 0.225/0.3W
Case SOT23
TO236AB
Current gain 80...250
Mounting SMD
Kind of package reel
tape
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