MMBFJ309LT1G - SMD N channel transistors

MMBFJ309LT1G
Description

Transistor: N-JFET; unipolar; 25V; 30mA; 0.225W; SOT23; Igt: 10mA

Specifications
Manufacturer ONSEMI
Type of transistor N-JFET
Polarisation unipolar
Drain-source voltage 25V
Drain current 30mA
Power dissipation 0.225W
Case SOT23
Gate-source voltage -25V
Mounting SMD
Kind of package reel
tape
Gate current 10mA
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Development and design: Seventh Cat