MMBFJ110 - SMD N channel transistors

MMBFJ110
Description

Transistor: N-JFET; unipolar; 10mA; 0.46W; SOT23; Igt: 10mA

Specifications
Manufacturer ONSEMI
Type of transistor N-JFET
Polarisation unipolar
Drain current 10mA
Power dissipation 0.46W
Case SOT23
Gate-source voltage -25V
On-state resistance 18Ω
Mounting SMD
Kind of package reel
tape
Gate current 10mA
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat