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Home / Catalog / TME catalog / Semiconductors / Transistors / Bipolar transistors / Darlington transistors / NPN SMD Darlington transistors / MJD112-LGE

MJD112-LGE - NPN SMD Darlington transistors

MJD112-LGE
Description

Transistor: NPN; bipolar; Darlington; 100V; 2A; 1W; TO252

Specifications
Manufacturer LUGUANG ELECTRONIC
Type of transistor NPN
Polarisation bipolar
Kind of transistor Darlington
Collector-emitter voltage 100V
Collector current 2A
Power dissipation 1W
Case TO252
Current gain 200...12000
Mounting SMD
Frequency 25MHz
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