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Home / Catalog / TME catalog / Semiconductors / Transistors / Bipolar transistors / Darlington transistors / NPN THT Darlington transistors / MJD112-1G

MJD112-1G - NPN THT Darlington transistors

MJD112-1G
Description

Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; IPAK

Specifications
Manufacturer ONSEMI
Type of transistor NPN
Polarisation bipolar
Kind of transistor Darlington
Collector-emitter voltage 100V
Collector current 2A
Power dissipation 1.75W
Case IPAK
Current gain 100...12000
Mounting THT
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