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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / LGEGW75N65S

LGEGW75N65S - THT IGBT transistors

LGEGW75N65S
Description

Transistor: IGBT; 650V; 75A; 250W; TO247

Specifications
Manufacturer LUGUANG ELECTRONIC
Type of transistor IGBT
Collector-emitter voltage 650V
Collector current 75A
Power dissipation 250W
Case TO247
Gate-emitter voltage ±30V
Pulsed collector current 300A
Mounting THT
Gate charge 340nC
Kind of package tube
Turn-on time 156ns
Turn-off time 348ns
Features of semiconductor devices integrated anti-parallel diode
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Development and design: Seventh Cat