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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / LGEGW50N65F1A

LGEGW50N65F1A - THT IGBT transistors

LGEGW50N65F1A
Description

Transistor: IGBT; 650V; 50A; 312W; TO247

Specifications
Manufacturer LUGUANG ELECTRONIC
Type of transistor IGBT
Collector-emitter voltage 650V
Collector current 50A
Power dissipation 312W
Case TO247
Gate-emitter voltage ±20V
Pulsed collector current 150A
Mounting THT
Gate charge 180nC
Kind of package tube
Turn-on time 62ns
Turn-off time 268ns
Features of semiconductor devices integrated anti-parallel diode
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Development and design: Seventh Cat