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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / LGEGW40N120F2

LGEGW40N120F2 - THT IGBT transistors

LGEGW40N120F2
Description

Transistor: IGBT; 1.2kV; 40A; 417W; TO247

Specifications
Manufacturer LUGUANG ELECTRONIC
Type of transistor IGBT
Collector-emitter voltage 1.2kV
Collector current 40A
Power dissipation 417W
Case TO247
Gate-emitter voltage ±20V
Pulsed collector current 160A
Mounting THT
Gate charge 250nC
Kind of package tube
Turn-on time 135ns
Turn-off time 270ns
Features of semiconductor devices integrated anti-parallel diode
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Development and design: Seventh Cat