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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / SMD IGBT transistors / LGEGB15N65T2

LGEGB15N65T2 - SMD IGBT transistors

LGEGB15N65T2
Description

Transistor: IGBT; 650V; 15A; 125W; TO263

Specifications
Manufacturer LUGUANG ELECTRONIC
Type of transistor IGBT
Collector-emitter voltage 650V
Collector current 15A
Power dissipation 125W
Case TO263
Gate-emitter voltage ±20V
Pulsed collector current 60A
Mounting SMD
Gate charge 45nC
Kind of package reel
tape
Turn-on time 40ns
Turn-off time 150ns
Features of semiconductor devices integrated anti-parallel diode
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Development and design: Seventh Cat