LGE2301-LGE - SMD P channel transistors

LGE2301-LGE
Description

Transistor: P-MOSFET; unipolar; -20V; -3A; 1W; SOT23

Specifications
Manufacturer LUGUANG ELECTRONIC
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -20V
Drain current -3A
Power dissipation 1W
Case SOT23
Gate-source voltage ±12V
On-state resistance 0.14Ω
Mounting SMD
Gate charge 12nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat