LGE2300-LGE - SMD N channel transistors

LGE2300-LGE
Description

Transistor: N-MOSFET; unipolar; 20V; 4A; 1.25W; SOT23

Specifications
Manufacturer LUGUANG ELECTRONIC
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 20V
Drain current 4A
Power dissipation 1.25W
Case SOT23
Gate-source voltage ±12V
On-state resistance 32mΩ
Mounting SMD
Gate charge 11nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat