IXYY8N90C3 - SMD IGBT transistors

IXYY8N90C3
Description

Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO252

Specifications
Manufacturer IXYS
Type of transistor IGBT
Technology GenX3™
Planar
XPT™
Collector-emitter voltage 900V
Collector current 8A
Power dissipation 125W
Case TO252
Gate-emitter voltage ±20V
Pulsed collector current 48A
Mounting SMD
Gate charge 13.3nC
Kind of package tube
Turn-on time 39ns
Turn-off time 238ns
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Development and design: Seventh Cat