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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / IXYX120N120B3

IXYX120N120B3 - THT IGBT transistors

IXYX120N120B3
Description

Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™

Specifications
Manufacturer IXYS
Type of transistor IGBT
Technology GenX3™
Planar
XPT™
Collector-emitter voltage 1.2kV
Collector current 120A
Power dissipation 1.5kW
Case PLUS247™
Gate-emitter voltage ±20V
Pulsed collector current 800A
Mounting THT
Gate charge 400nC
Kind of package tube
Turn-on time 84ns
Turn-off time 826ns
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Development and design: Seventh Cat