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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / IXYP8N90C3D1

IXYP8N90C3D1 - THT IGBT transistors

IXYP8N90C3D1
Description

Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3

Specifications
Manufacturer IXYS
Type of transistor IGBT
Technology GenX3™
Planar
XPT™
Collector-emitter voltage 900V
Collector current 8A
Power dissipation 125W
Case TO220-3
Gate-emitter voltage ±20V
Pulsed collector current 48A
Mounting THT
Gate charge 13.3nC
Kind of package tube
Turn-on time 39ns
Turn-off time 238ns
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Development and design: Seventh Cat