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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / IXYH100N65C3

IXYH100N65C3 - THT IGBT transistors

IXYH100N65C3
Description

Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3

Specifications
Manufacturer IXYS
Type of transistor IGBT
Technology GenX3™
Planar
XPT™
Collector-emitter voltage 650V
Collector current 100A
Power dissipation 830W
Case TO247-3
Gate-emitter voltage ±20V
Pulsed collector current 420A
Mounting THT
Gate charge 172nC
Kind of package tube
Turn-on time 62ns
Turn-off time 200ns
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Development and design: Seventh Cat