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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / SMD IGBT transistors / IXYA20N65C3D1

IXYA20N65C3D1 - SMD IGBT transistors

IXYA20N65C3D1
Description

Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263

Specifications
Manufacturer IXYS
Type of transistor IGBT
Technology GenX3™
Planar
XPT™
Collector-emitter voltage 650V
Collector current 20A
Power dissipation 200W
Case TO263
Gate-emitter voltage ±20V
Pulsed collector current 105A
Mounting SMD
Gate charge 30nC
Kind of package tube
Turn-on time 51ns
Turn-off time 132ns
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Development and design: Seventh Cat