IXXK110N65B4H1 - THT IGBT transistors

IXXK110N65B4H1
Description

Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264

Specifications
Manufacturer IXYS
Type of transistor IGBT
Technology GenX4™
Trench
XPT™
Collector-emitter voltage 650V
Collector current 110A
Power dissipation 880W
Case TO264
Gate-emitter voltage ±20V
Pulsed collector current 570A
Mounting THT
Gate charge 183nC
Kind of package tube
Turn-on time 65ns
Turn-off time 250ns
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Development and design: Seventh Cat