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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / IXXH60N65B4H1

IXXH60N65B4H1 - THT IGBT transistors

IXXH60N65B4H1
Description

Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3

Specifications
Manufacturer IXYS
Type of transistor IGBT
Technology GenX4™
Trench
XPT™
Collector-emitter voltage 650V
Collector current 60A
Power dissipation 536W
Case TO247-3
Gate-emitter voltage ±20V
Pulsed collector current 265A
Mounting THT
Gate charge 86nC
Kind of package tube
Turn-on time 94ns
Turn-off time 208ns
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Development and design: Seventh Cat