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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / IXXH30N60B3D1

IXXH30N60B3D1 - THT IGBT transistors

IXXH30N60B3D1
Description

Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD

Specifications
Manufacturer IXYS
Type of transistor IGBT
Technology GenX3™
Planar
XPT™
Collector-emitter voltage 600V
Collector current 30A
Power dissipation 270W
Case TO247AD
Gate-emitter voltage ±20V
Pulsed collector current 115A
Mounting THT
Gate charge 39nC
Kind of package tube
Turn-on time 23ns
Turn-off time 125ns
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Development and design: Seventh Cat