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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / IXTY1R6N100D2

IXTY1R6N100D2 - SMD N channel transistors

IXTY1R6N100D2
Description

Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 1kV
Drain current 1.6A
Power dissipation 100W
Case TO252
Gate-source voltage ±20V
On-state resistance 10Ω
Mounting SMD
Gate charge 645nC
Kind of package tube
Kind of channel depletion
Reverse recovery time 11ns
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Development and design: Seventh Cat