IXTY1N120P - SMD N channel transistors

IXTY1N120P
Description

Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 1A
Power dissipation 63W
Case TO252
On-state resistance 20Ω
Mounting SMD
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices standard power mosfet
Reverse recovery time 900ns
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Development and design: Seventh Cat