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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / IXTY18P10T

IXTY18P10T - SMD P channel transistors

IXTY18P10T
Description

Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252

Specifications
Manufacturer IXYS
Type of transistor P-MOSFET
Technology TrenchP™
Polarisation unipolar
Drain-source voltage -100V
Drain current -18A
Power dissipation 83W
Case TO252
Gate-source voltage ±15V
On-state resistance 0.12Ω
Mounting SMD
Gate charge 39nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 62ns
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Development and design: Seventh Cat