IXTY14N60X2 - SMD N channel transistors

IXTY14N60X2
Description

Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 14A
Pulsed drain current 18A
Power dissipation 180W
Case DPAK
Gate-source voltage ±30V
On-state resistance 0.25Ω
Mounting SMD
Gate charge 16.7nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat