IXTX120P20T - THT P channel transistors

IXTX120P20T
Description

Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W

Specifications
Manufacturer IXYS
Type of transistor P-MOSFET
Technology TrenchP™
Polarisation unipolar
Drain-source voltage -200V
Drain current -120A
Power dissipation 1.04kW
Case PLUS247™
Gate-source voltage ±15V
On-state resistance 30mΩ
Mounting THT
Gate charge 740nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 300ns
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Development and design: Seventh Cat