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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / IXTT8P50

IXTT8P50 - SMD P channel transistors

IXTT8P50
Description

Transistor: P-MOSFET; unipolar; -500V; -8A; 180W; TO268; 400ns

Specifications
Manufacturer IXYS
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -500V
Drain current -8A
Power dissipation 180W
Case TO268
Gate-source voltage ±20V
On-state resistance 1.2Ω
Mounting SMD
Gate charge 130nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 400ns
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Development and design: Seventh Cat