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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / IXTT88N30P

IXTT88N30P - SMD N channel transistors

IXTT88N30P
Description

Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology PolarHT™
Polarisation unipolar
Drain-source voltage 300V
Drain current 88A
Power dissipation 600W
Case TO268
Gate-source voltage ±20V
On-state resistance 40mΩ
Mounting SMD
Gate charge 180nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 250ns
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Development and design: Seventh Cat