IXTT75N10L2 - SMD N channel transistors

IXTT75N10L2
Description

Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; TO268

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology Linear L2™
Polarisation unipolar
Drain-source voltage 100V
Drain current 75A
Power dissipation 400W
Case TO268
Gate-source voltage ±20V
On-state resistance 21mΩ
Mounting SMD
Gate charge 215nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 180ns
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Development and design: Seventh Cat