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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / IXTT68P20T

IXTT68P20T - SMD P channel transistors

IXTT68P20T
Description

Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -68A; 568W; TO268

Specifications
Manufacturer IXYS
Type of transistor P-MOSFET
Technology TrenchP™
Polarisation unipolar
Drain-source voltage -200V
Drain current -68A
Power dissipation 568W
Case TO268
Gate-source voltage ±15V
On-state resistance 55mΩ
Mounting SMD
Gate charge 380nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 245ns
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Development and design: Seventh Cat