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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / IXTT50P10

IXTT50P10 - SMD P channel transistors

IXTT50P10
Description

Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns

Specifications
Manufacturer IXYS
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -100V
Drain current -50A
Power dissipation 300W
Case TO268
Gate-source voltage ±20V
On-state resistance 55mΩ
Mounting SMD
Gate charge 0.14µC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 180ns
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Development and design: Seventh Cat