IXTT24P20 - SMD P channel transistors

IXTT24P20
Description

Transistor: P-MOSFET; unipolar; -200V; -24A; 300W; TO268; 250ns

Specifications
Manufacturer IXYS
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -200V
Drain current -24A
Power dissipation 300W
Case TO268
Gate-source voltage ±20V
On-state resistance 0.15Ω
Mounting SMD
Gate charge 150nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 250ns
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Development and design: Seventh Cat