IXTT16P60P - SMD P channel transistors

IXTT16P60P
Description

Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO268

Specifications
Manufacturer IXYS
Type of transistor P-MOSFET
Technology PolarP™
Polarisation unipolar
Drain-source voltage -600V
Drain current -16A
Power dissipation 460W
Case TO268
Gate-source voltage ±20V
On-state resistance 720mΩ
Mounting SMD
Gate charge 92nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 440ns
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Development and design: Seventh Cat