IXTQ50N20P - THT N channel transistors

IXTQ50N20P
Description

Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology PolarHT™
Polarisation unipolar
Drain-source voltage 200V
Drain current 50A
Power dissipation 360W
Case TO3P
Gate-source voltage ±20V
On-state resistance 60mΩ
Mounting THT
Gate charge 70nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 150ns
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Development and design: Seventh Cat