IXTQ34N65X2M - THT N channel transistors

IXTQ34N65X2M
Description

Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 650V
Drain current 34A
Pulsed drain current 48A
Power dissipation 40W
Case TO3PF
Gate-source voltage ±30V
On-state resistance 96mΩ
Mounting THT
Gate charge 54nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat