IXTQ26N50P - THT N channel transistors

IXTQ26N50P
Description

Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 500V
Drain current 26A
Power dissipation 400W
Case TO3P
On-state resistance 0.23Ω
Mounting THT
Gate charge 65nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices standard power mosfet
Reverse recovery time 300ns
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Development and design: Seventh Cat