IXTQ22N50P - THT N channel transistors

IXTQ22N50P
Description

Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 500V
Drain current 22A
Power dissipation 350W
Case TO3P
On-state resistance 0.27Ω
Mounting THT
Gate charge 50nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices standard power mosfet
Reverse recovery time 400ns
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat