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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IXTQ200N10T

IXTQ200N10T - THT N channel transistors

IXTQ200N10T
Description

Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 200A
Power dissipation 550W
Case TO3P
On-state resistance 5.5mΩ
Mounting THT
Gate charge 152nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices thrench gate power mosfet
Reverse recovery time 76ns
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Development and design: Seventh Cat