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Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
| Manufacturer |
IXYS |
| Type of transistor |
N-MOSFET |
| Technology |
Trench™ |
| Polarisation |
unipolar |
| Drain-source voltage |
200V |
| Drain current |
75A |
| Pulsed drain current |
320A |
| Power dissipation |
830W |
| Case |
TO3P |
| Gate-source voltage |
±20V |
| On-state resistance |
16mΩ |
| Mounting |
THT |
| Gate charge |
150nC |
| Kind of package |
tube |
| Kind of channel |
enhancement |
| Features of semiconductor devices |
thrench gate power mosfet |
| Reverse recovery time |
150ns |