IXTQ120N20P - THT N channel transistors

IXTQ120N20P
Description

Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology PolarHT™
Polarisation unipolar
Drain-source voltage 200V
Drain current 120A
Power dissipation 714W
Case TO3P
Gate-source voltage ±20V
On-state resistance 22mΩ
Mounting THT
Gate charge 152nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 180ns
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Development and design: Seventh Cat