IXTP80N10T - THT N channel transistors

IXTP80N10T
Description

Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 80A
Power dissipation 230W
Case TO220AB
On-state resistance 14mΩ
Mounting THT
Gate charge 60nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices thrench gate power mosfet
Reverse recovery time 100ns
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Development and design: Seventh Cat