IXTP60N10T - THT N channel transistors

IXTP60N10T
Description

Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 60A
Power dissipation 176W
Case TO220AB
On-state resistance 18mΩ
Mounting THT
Gate charge 49nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices thrench gate power mosfet
Reverse recovery time 59ns
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Development and design: Seventh Cat