IXTP50N25T - THT N channel transistors

IXTP50N25T
Description

Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 250V
Drain current 50A
Power dissipation 400W
Case TO220AB
On-state resistance 60mΩ
Mounting THT
Gate charge 78nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices thrench gate power mosfet
Reverse recovery time 166ns
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Development and design: Seventh Cat