IXTP4N80P - THT N channel transistors

IXTP4N80P
Description

Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology PolarHV™
Polarisation unipolar
Drain-source voltage 800V
Drain current 3.6A
Pulsed drain current 8A
Power dissipation 100W
Case TO220AB
Gate-source voltage ±30V
On-state resistance 3.4Ω
Mounting THT
Gate charge 14.2nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices standard power mosfet
Reverse recovery time 560ns
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Development and design: Seventh Cat